| PART |
Description |
Maker |
| CRF24010D |
10 W SiC RF Power MESFET Die
|
CREE[Cree, Inc]
|
| S6306 |
SiC Schottky Barrier Diode Bare Die
|
Rohm Co., Ltd.
|
| S6304 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| S4103 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| NEZ1011-8E NEZ1414-8E |
8W X, Ku-BAND POWER GaAs MESFET 8瓦特十，KU波段功率GaAs MESFET
8W X / Ku-BAND POWER GaAs MESFET
8W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| APT2X21DC60J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| NE650103M NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
Duracell
California Eastern Labs
|
| NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
| NE960R27501 NE960R275 |
0.2W X, Ku-BAND POWER GaAs MESFET
|
NEC[NEC]
|
